Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519324

K. Lear, R. Schneider, K. Choquette, S. Kilcoyne, J. Figiel, J. Zolper

引用次数: 1

Abstract

We have demonstrated vertical-cavity top-surface-emitting InGaAs QW lasers by metalorganic vapor phase epitaxy that set record cw performance marks of 21% power conversion efficiency, 1.47 V threshold voltage, 23 mW output power, and 3.7 mW single-mode output power. The enhanced laser performance relies on novel mirror designs and benefits of metalorganic vapor phase epitaxy.

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金属有机气相外延制备效率21%的垂直腔面发射激光器

我们通过金属有机气相外延演示了垂直腔顶面发射InGaAs QW激光器，该激光器创造了连续波性能记录，功率转换效率为21%，阈值电压为1.47 V，输出功率为23 mW，单模输出功率为3.7 mW。激光性能的增强依赖于新型镜面设计和金属有机气相外延的优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

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