GaInP-crossed-coupled-cavity-laser (XCCL) for investigation of strain effects and GaInP superlattice ordering

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519165

F. Barth, G. Forstmann, S. Nagel, C. Geng, F. Scholz, H. Schweizer, E. O’Reilly, M. Pilkuhn

引用次数: 0

Abstract

Summary form only given. An anistropy of GaInP lasers with CuPt-type superlattice was observed in polarization of laser emission. This effect can be understood with direction dependent transition matrix elements. A XCCL device is used for testing anisotropic properties.

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用于研究应变效应和GaInP超晶格有序的交叉耦合腔激光器(XCCL)

只提供摘要形式。具有cupt型超晶格的GaInP激光器在激光发射极化过程中表现出一种各向异性。这种效应可以用方向相关的过渡矩阵元素来理解。XCCL装置用于测试各向异性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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