低阈值电流780 nm InAlGaAs/ algaas应变QW激光器和集成无源，非吸收锥形模式尺寸变压器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519168

G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester

{"title":"低阈值电流780 nm InAlGaAs/ algaas应变QW激光器和集成无源，非吸收锥形模式尺寸变压器","authors":"G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester","doi":"10.1109/ISLC.1994.519168","DOIUrl":null,"url":null,"abstract":"Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer\",\"authors\":\"G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester\",\"doi\":\"10.1109/ISLC.1994.519168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

只提供摘要形式。在AlGaAs/AlGaAs中，工作在780 nm的QW激光器已经实现，阈值电流降至8.2 mA。单片集成的无源，非吸收模式大小的变压器首次被证明。

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Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer

Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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