1.3 /spl mu/m和1.55 /spl mu/m高功率量子阱增益耦合(GC) DFB激光器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518912

B. Borchert, J. Rieger, B. Stegmuller

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引用次数: 10

摘要

只提供摘要形式。介绍了带损耗光栅的InGaAsP量子阱增益耦合DFB激光器的高功率特性。其中单模(SM)值为创纪录的115兆瓦(1.3 /spl亩/米)和95兆瓦(1.55 /spl亩/米)。在20mw时，sm产率高达66%。

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High power quantum-well gain-coupled (GC) DFB lasers at 1.3 /spl mu/m and 1.55 /spl mu/m

Summary form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 /spl mu/m and 95 mW at 1.55 /spl mu/m. The SM-yield at 20 mW is as high as 66%.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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