采用多模干涉输出耦合器改善半导体环形激光器的性能

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519147

T. Krauss, P. Laybourn, R. Delarue

{"title":"采用多模干涉输出耦合器改善半导体环形激光器的性能","authors":"T. Krauss, P. Laybourn, R. Delarue","doi":"10.1109/ISLC.1994.519147","DOIUrl":null,"url":null,"abstract":"We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improved performance of semiconductor ring lasers with multi-mode interference output couplers\",\"authors\":\"T. Krauss, P. Laybourn, R. Delarue\",\"doi\":\"10.1109/ISLC.1994.519147\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519147\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们在GaAs/AlGaAs中提出了条带加载环形激光器，其工作阈值电流为140 mA，总泵浦器件长度为4.5 mm，量子效率为7%(每次输出)，据我们所知，这是迄今为止报道的此类激光器的最高效率。

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Improved performance of semiconductor ring lasers with multi-mode interference output couplers

We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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