New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519334

A. Phillips, A. T. Meney, A. Prins, J. Sly, E. O’Reilly, D. Dunstan, A. Adams, A. Valster

引用次数: 0

Abstract

Using hydrostatic pressure, new energies for the X-minima, L-minima and band offsets in (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P were obtained and correlated with temperature and pressure measurements on visible lasers using diffusion models.

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无序AlGaInP带结构的新测定及其对可见激光特性的影响

利用静水压力，得到了(Al/sub x/Ga/sub 1-x/)/sub 0.5/ in /sub 0.5/P中x -极小值、l -极小值和波段偏移的新能量，并利用扩散模型将其与可见光激光的温度和压力测量结果进行了关联。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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