{"title":"用于17通道低阈值阵列的极小有源条纹激光器(exsas - ld)","authors":"S. Kitamura, T. Sasaki, K. Komatsu, M. Kitamura","doi":"10.1109/ISLC.1994.519151","DOIUrl":null,"url":null,"abstract":"Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 /spl mu/m wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array\",\"authors\":\"S. Kitamura, T. Sasaki, K. Komatsu, M. Kitamura\",\"doi\":\"10.1109/ISLC.1994.519151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 /spl mu/m wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array
Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 /spl mu/m wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique.
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