{"title":"Improved performance of semiconductor ring lasers with multi-mode interference output couplers","authors":"T. Krauss, P. Laybourn, R. Delarue","doi":"10.1109/ISLC.1994.519147","DOIUrl":null,"url":null,"abstract":"We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519147","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.