2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519357

S. O’Brien, R. Lang, D. Welch, R. Parke, D. Scifres

引用次数: 2

Abstract

An GaAs-AlGaAs monolithically integrated master oscillator power amplifier (M-MOPA) operating in a single longitudinal mode at 854 nm has been fabricated which produces 2.2 W cw with a single-lobed, diffraction-limited far field pattern. Additionally, the extinction ratio in the far field with the oscillator turned off is 26 dB.

查看原文本刊更多论文

2.2 854 nm的wcw衍射限制单片集成主振荡器功率放大器

制备了一种工作在854 nm单纵向模式下的GaAs-AlGaAs单片集成主振荡器功率放大器(M-MOPA)，该功率放大器产生2.2 W的单瓣、衍射受限远场图。此外，振荡器关闭时远场的消光比为26 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

自引率

0.00%

发文量