InGaAs/InGaAsP多量子阱中异常慢载流子-声子相互作用的载流子温度时间发展研究

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518919

M. Nido, A. Suzuki

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引用次数: 2

摘要

通过对1.5 /spl mu/m波段多量子阱(MQW)激光放大器载流子温度实验时间发展的速率方程分析，得到了极大的电子- lo声子亚带内散射时间(8 ps)。因此，预测了MQW激光器中明显的光输出功率饱和。

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Anomalously slow carrier-phonon interaction in InGaAs/InGaAsP multi-quantum-well investigated by time-development of carrier temperature

Extremely large electron-LO phonon intrasubband scattering time (8 ps) was obtained, by the rate-equation analysis for the experimental time-development of the carrier temperature in a 1.5 /spl mu/m-band multi-quantum-well (MQW) laser amplifier. Consequently, pronounced optical output power saturation was predicted in the MQW laser.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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