InAsSb/AlAsSb双异质结构和InAsSb/InAlAs量子阱二极管激光器，发射频率为/spl sim/4 /spl mu/m

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518903

H.K. Choi, G. Turner, Z. Liau

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摘要

研究了发射功率为3.9 /spl mu/m的InAsSb/AlAsSb双异质结构激光器，其脉冲工作温度为170 K，连续工作温度为105 K，在70 K时连续工作功率为30 mW。InAsSb/InAlAs量子阱激光器发射速度为4.5 /spl mu/m，工作脉冲高达85 K。

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InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m

Studies InAsSb/AlAsSb double-heterostructure lasers emitting at 3.9 /spl mu/m which operated pulsed up to 170 K and CW up to 105 K, with CW power of 30 mW at 70 K. InAsSb/InAlAs quantum-well lasers emitting at 4.5 /spl mu/m operated pulsed up to 85 K.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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