增益耦合1.3 /spl μ m应变层MQW DFB激光器的大功率高速性能

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518914

H. Lu, C. Blaauw, B. Benyon, T. Makino

{"title":"增益耦合1.3 /spl μ m应变层MQW DFB激光器的大功率高速性能","authors":"H. Lu, C. Blaauw, B. Benyon, T. Makino","doi":"10.1109/ISLC.1994.518914","DOIUrl":null,"url":null,"abstract":"Summary form only given. High power and high modulation bandwidth 1.3 /spl mu/m DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High-power and high-speed performance of gain-coupled 1.3 /spl mu/m strained-layer MQW DFB lasers\",\"authors\":\"H. Lu, C. Blaauw, B. Benyon, T. Makino\",\"doi\":\"10.1109/ISLC.1994.518914\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. High power and high modulation bandwidth 1.3 /spl mu/m DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.518914\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.518914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

只提供摘要形式。本文首次报道了在应变层MQW有源区具有增益耦合的高功率、高调制带宽1.3 /spl mu/m DFB InGaAsP QW激光器。由于增益耦合效应的性质，器件显示出具有一贯高单模产率的激光光谱。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-power and high-speed performance of gain-coupled 1.3 /spl mu/m strained-layer MQW DFB lasers

Summary form only given. High power and high modulation bandwidth 1.3 /spl mu/m DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE 14th International Semiconductor Laser Conference

自引率

0.00%

发文量