Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.518909

A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian

引用次数: 2

Abstract

Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).

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新型高性能应变层MQW单片集成DFB激光电吸收调制器

只提供摘要形式。提出了一种新颖、简单的应变层InGaAsP MQW分布式反馈激光电吸收调制器单片集成方法，该方法在1.5 /spl mu/m的工作电压下具有很高的性能(对于70 /spl mu/m长的调制器，在1.5 V工作电压下消光比为13.6 dB)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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