2.2 854 nm的wcw衍射限制单片集成主振荡器功率放大器

Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI:10.1109/ISLC.1994.519357

S. O’Brien, R. Lang, D. Welch, R. Parke, D. Scifres

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引用次数: 2

摘要

制备了一种工作在854 nm单纵向模式下的GaAs-AlGaAs单片集成主振荡器功率放大器(M-MOPA)，该功率放大器产生2.2 W的单瓣、衍射受限远场图。此外，振荡器关闭时远场的消光比为26 dB。

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2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm

An GaAs-AlGaAs monolithically integrated master oscillator power amplifier (M-MOPA) operating in a single longitudinal mode at 854 nm has been fabricated which produces 2.2 W cw with a single-lobed, diffraction-limited far field pattern. Additionally, the extinction ratio in the far field with the oscillator turned off is 26 dB.

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Proceedings of IEEE 14th International Semiconductor Laser Conference

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