A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian
{"title":"新型高性能应变层MQW单片集成DFB激光电吸收调制器","authors":"A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian","doi":"10.1109/ISLC.1994.518909","DOIUrl":null,"url":null,"abstract":"Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer\",\"authors\":\"A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian\",\"doi\":\"10.1109/ISLC.1994.518909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.518909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.518909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer
Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).