{"title":"应变量子阱表面发射激光器偏振特性的生长方向依赖性","authors":"T. Ohtoshi, T. Kuroda, A. Niwa, S. Tsuji, K. Uomi","doi":"10.1109/ISLC.1994.519310","DOIUrl":null,"url":null,"abstract":"Polarization properties of surface-emitting lasers are analyzed theoretically for various crystallographic directions. In strained quantum wells on (NN1) substrates (N/spl ges/2), the polarization can be controlled, facilitating high optical gains.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells\",\"authors\":\"T. Ohtoshi, T. Kuroda, A. Niwa, S. Tsuji, K. Uomi\",\"doi\":\"10.1109/ISLC.1994.519310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polarization properties of surface-emitting lasers are analyzed theoretically for various crystallographic directions. In strained quantum wells on (NN1) substrates (N/spl ges/2), the polarization can be controlled, facilitating high optical gains.\",\"PeriodicalId\":356540,\"journal\":{\"name\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 14th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1994.519310\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 14th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1994.519310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells
Polarization properties of surface-emitting lasers are analyzed theoretically for various crystallographic directions. In strained quantum wells on (NN1) substrates (N/spl ges/2), the polarization can be controlled, facilitating high optical gains.
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