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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Optical gain and continuous tuning of sub-millimeter injectionless hot hole p-Ge laser 亚毫米无注入热孔p-Ge激光器的光学增益和连续调谐
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558749
L. Vorobjev, S. Danilov, D. Firsov
{"title":"Optical gain and continuous tuning of sub-millimeter injectionless hot hole p-Ge laser","authors":"L. Vorobjev, S. Danilov, D. Firsov","doi":"10.1109/ISLC.1996.558749","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558749","url":null,"abstract":"Tuned submillimeter (80-200 /spl mu/m) laser based on hole heating in germanium is designed and investigated in Faraday and Voight field configurations. GaAs-AlGaAs quantum well structures were investigated with this hot hole laser.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131445397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm 兼容oeic的侧向注入激光器的内部工作机制:与垂直注入模式的内在差异
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553772
E. Sargent, G. Tan, D. Suda, J.M. Xu
{"title":"Internal operating mechanisms of OEIC-compatible lateral injection lasers: Intrinsic differences from the vertical injection paradigm","authors":"E. Sargent, G. Tan, D. Suda, J.M. Xu","doi":"10.1109/ISLC.1996.553772","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553772","url":null,"abstract":"Mechanisms which govern the performance of lateral injection semiconductor lasers grown on a semi-insulating substrate and suitable for monolithic optoelectronic integration are explored. Results agree with experiment, permit an understanding of intrinsic differences in device operation relative to vertical injection lasers, and yield insights into improved design methodologies.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124287480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Subharmonic synchronous mode-locking of a monolithic DBR semiconductor laser 单片DBR半导体激光器的亚谐波同步锁模
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553744
A. Nirmalathas, H. Liu, Z. Ahmed, M. Pelusi, D. Novak
{"title":"Subharmonic synchronous mode-locking of a monolithic DBR semiconductor laser","authors":"A. Nirmalathas, H. Liu, Z. Ahmed, M. Pelusi, D. Novak","doi":"10.1109/ISLC.1996.553744","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553744","url":null,"abstract":"We report on synchronous mode-locking of a 33 GHz monolithic DBR semiconductor laser using an input optical pulse train with a repetition rate equal to the 20th subharmonic frequency, namely 1.65 GHz. The resulting 33 GHz optical pulse train exhibits very low timing jitter (< 0.21 ps).","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122504655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Blue/green semiconductor laser 蓝/绿半导体激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553720
S. Nakamura
{"title":"Blue/green semiconductor laser","authors":"S. Nakamura","doi":"10.1109/ISLC.1996.553720","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553720","url":null,"abstract":"Violet InGaN multi-quantum-well structure laser diodes (LDs) which have the shortest emission wavelength among conventional semiconductor LDs have been developed. The lifetime of green ZnMgSSe based LDs has been improved to be as long as 101 hours.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127272353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High power picosecond pulse generation from a two-section InGaAsP-InP MQW complex-coupled DFB laser diode 两段InGaAsP-InP MQW复合耦合DFB激光二极管产生高功率皮秒脉冲
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558778
Ziping Jiang, H. Tsang, W. Wang, Zhijie Wang, Xiaojie Wang, Qiming Wang
{"title":"High power picosecond pulse generation from a two-section InGaAsP-InP MQW complex-coupled DFB laser diode","authors":"Ziping Jiang, H. Tsang, W. Wang, Zhijie Wang, Xiaojie Wang, Qiming Wang","doi":"10.1109/ISLC.1996.558778","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558778","url":null,"abstract":"We show that high power picosecond pulses can be generated from a InGaAsP compressively strained two-section MQW laser diode by setting an optimal amplitude and time delay between the electrical pulses applied to each section of the device.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Loss analysis of 1.55 /spl mu/m vertical cavity lasers 1.55 /spl mu/m垂直腔激光器损耗分析
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553731
Joachim Piprek, D. Babic, N. Margalit, John E. Bowers
{"title":"Loss analysis of 1.55 /spl mu/m vertical cavity lasers","authors":"Joachim Piprek, D. Babic, N. Margalit, John E. Bowers","doi":"10.1109/ISLC.1996.553731","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553731","url":null,"abstract":"Summary form only given. Recently, room temperature cw operation of 1.55 /spl mu/m InGaAsP MQW DBR VCSELs has been achieved for the first time. At higher temperatures, laser operation is restricted by internal losses including intervalenceband absorption and carrier leakage. Measured characteristics are simulated using a comprehensive numerical model to analyze those losses in detail and to optimize the VCSEL design.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130647483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers 应变GaInP/AlGaInP量子阱激光器的固有调制带宽
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558764
A. Moritz, R. Wirth, S. Heppel, C. Geng, J. Kuhn, H. Schweizer, F. Scholz, A. Hangleiter
{"title":"Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers","authors":"A. Moritz, R. Wirth, S. Heppel, C. Geng, J. Kuhn, H. Schweizer, F. Scholz, A. Hangleiter","doi":"10.1109/ISLC.1996.558764","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558764","url":null,"abstract":"We have measured the high frequency response of Ga/sub x/In/sub 1-x/P/AlGaInP quantum well lasers. We found a maximum bandwidth of 7.5 GHz at -3 dB for a strongly compressively strained sample which is limited by catastrophic optical damage.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129753716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence 具有极低光束发散的980 nm InGaAs/AlGaAs量子阱激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553725
S. Yen, G. Lin, Der-Cherng Liu, Chia-Ming Tsai, Chien-Ping Lee
{"title":"980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence","authors":"S. Yen, G. Lin, Der-Cherng Liu, Chia-Ming Tsai, Chien-Ping Lee","doi":"10.1109/ISLC.1996.553725","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553725","url":null,"abstract":"We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124462848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of process control in oxide-confined top-emitting lasers 过程控制对氧化约束顶发射激光器的影响
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553758
M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain
{"title":"Effect of process control in oxide-confined top-emitting lasers","authors":"M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.553758","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553758","url":null,"abstract":"Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114583375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High power 10-wavelength DFB laser arrays with integrated combiner and optical amplifier 高功率10波长DFB激光阵列，集成了组合器和光放大器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558757
C. Zah, B. Pathak, M. Amersfoort, F. Favire, P. Lin, N. Andreadakis, A. Rajhel, R. Bhat, C. Caneau, M. Koza, L. Curtis
{"title":"High power 10-wavelength DFB laser arrays with integrated combiner and optical amplifier","authors":"C. Zah, B. Pathak, M. Amersfoort, F. Favire, P. Lin, N. Andreadakis, A. Rajhel, R. Bhat, C. Caneau, M. Koza, L. Curtis","doi":"10.1109/ISLC.1996.558757","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558757","url":null,"abstract":"We report high power performance of a 10-wavelength DFB laser array using on-chip optical amplification. Average power per wavelength into a single mode fiber is 6.5 dBm and 0.5 dBm under individual and simultaneous operation, respectively.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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