980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

S. Yen, G. Lin, Der-Cherng Liu, Chia-Ming Tsai, Chien-Ping Lee
{"title":"980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence","authors":"S. Yen, G. Lin, Der-Cherng Liu, Chia-Ming Tsai, Chien-Ping Lee","doi":"10.1109/ISLC.1996.553725","DOIUrl":null,"url":null,"abstract":"We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553725","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We report on the fabrication of 980 nm InGaAs-AlGaAs lasers with a specially designed cladding structure. For a 2.5 /spl mu/m wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13/spl deg/ and a lateral divergence of 8/spl deg/. Meanwhile, the threshold current can remain acceptably low. In addition, with another design, a record small vertical far field angle of 11/spl deg/ was obtained.
具有极低光束发散的980 nm InGaAs/AlGaAs量子阱激光器
本文报道了一种特殊包层结构的980 nm InGaAs-AlGaAs激光器的制备。对于2.5 /spl μ m宽的脊波导结构,远场模式的垂直散度仅为13/spl°/,横向散度为8/spl°/。同时,阈值电流可以保持可接受的低。此外,通过另一种设计,获得了创纪录的小垂直远场角11/spl°/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信