发布求助
文献互助 智能选刊 最新文献

Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

筛选
英文 中文
Technology and application trends of photonic integrated circuits 光子集成电路技术及应用趋势
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-12-01 DOI: 10.1109/ISLC.1996.553722
T. Koch
{"title":"Technology and application trends of photonic integrated circuits","authors":"T. Koch","doi":"10.1109/ISLC.1996.553722","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553722","url":null,"abstract":"Research on photonic integrated circuits initially focused on the technical challenges of combining a variety of distinct optical waveguide elements with a minimum of fabrication and epitaxial complexity. The vehicles used to chronicle the progress in this technology have often preceded any real market opportunity, instead hoping to stimulate the development of applications that would rely on dramatic cost-savings that PICs might deliver. With this model, WDM becomes a likely candidate for PIC technology. A number of simple photonic integrated circuits (PICs) are already commercially available in diverse application areas ranging from low-chirp integrated laser-electroabsorption modulator sources to high-power master oscillator-power amplifier (MOPA) sources.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131751930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experimental analysis of characteristic temperature in quantum-well semiconductor lasers 量子阱半导体激光器特性温度的实验分析
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/2944.605702
T. Higashi, T. Yamamoto, S. Kubota, S. Ogita
{"title":"Experimental analysis of characteristic temperature in quantum-well semiconductor lasers","authors":"T. Higashi, T. Yamamoto, S. Kubota, S. Ogita","doi":"10.1109/2944.605702","DOIUrl":"https://doi.org/10.1109/2944.605702","url":null,"abstract":"Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115306969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers 遥控增益调制用于远红外p-Ge热孔激光器的主动模式锁定
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553748
R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach
{"title":"Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers","authors":"R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach","doi":"10.1109/ISLC.1996.553748","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553748","url":null,"abstract":"The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126030532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monte Carlo simulations of carrier transport in AlGaInP laser diodes AlGaInP激光二极管中载流子输运的蒙特卡罗模拟
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553736
G. Crow, R. Abram
{"title":"Monte Carlo simulations of carrier transport in AlGaInP laser diodes","authors":"G. Crow, R. Abram","doi":"10.1109/ISLC.1996.553736","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553736","url":null,"abstract":"A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP multiple quantum well lasers has been devised in an effort to understand why the light output from these lasers is reduced at high temperatures.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115524637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons 考虑电子与LO声子相互作用的量子点激光器激光特性计算
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553738
H. Nakayama, Y. Arakawa
{"title":"Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons","authors":"H. Nakayama, Y. Arakawa","doi":"10.1109/ISLC.1996.553738","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553738","url":null,"abstract":"We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate lasing characteristics. The results show that there is no phonon bottleneck and an extremely low threshold current as well as a wide modulation bandwidth can be achieved.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116009118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Trains of 250 fs pulses at sub-intrinsic-cavity roundtrip intervals from chirped mode-locked laser diodes 以亚本征腔往返间隔从啁啾锁模激光二极管发出的250 fs脉冲序列
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553773
N. Stelmakh, A. Azouz, J. Lourtioz
{"title":"Trains of 250 fs pulses at sub-intrinsic-cavity roundtrip intervals from chirped mode-locked laser diodes","authors":"N. Stelmakh, A. Azouz, J. Lourtioz","doi":"10.1109/ISLC.1996.553773","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553773","url":null,"abstract":"To our knowledge, fine periodical evolutions of the pulse structure with the length of the external cavity have never been reported in short-pulse mode-locked extended-cavity laser diodes. In this communication, we demonstrate a strong inter-dependence between the external and intrinsic cavity lengths in these mode-locked laser systems when an external chirp compensation is used. We found that the length of the external cavity (l/sub e/) must be equal to a multiple of the intrinsic laser diode cavity length (l/sub i/) to produce standard pulse structures with one sub-pulse per intrinsic cavity roundtrip time. Similarly, the external cavity length must be equal to (m+1/n)*l/sub i/, with m being an integer, to obtain n sub-pulses per intrinsic cavity roundtrip time. In our experiments, we observed pronounced pulse structures for n up to 8. This latter value corresponds to the generation of /spl sim/250 fs pulse trains with a pulse repetition rate of /spl sim/300 GHz and a total energy /spl sim/20-30 pJ.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of bit error rate performance signal processing schemes exploiting semiconductor optical amplifiers 利用半导体光放大器的信号处理方案误码率性能分析
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558745
M. Shtaif, G. Eisenstein
{"title":"Analysis of bit error rate performance signal processing schemes exploiting semiconductor optical amplifiers","authors":"M. Shtaif, G. Eisenstein","doi":"10.1109/ISLC.1996.558745","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558745","url":null,"abstract":"We describe a detailed calculation of BER performance in nonlinear optical amplifiers. The analysis addresses noise in the nonlinear gain regime and dynamical effects at high bit rates related to slow gain dynamics. Improved performance of an adaptive decision threshold level receiver is proposed.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129552977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiple-wavelength MBE-regrown vertical-cavity laser arrays integrated with refractive microlenses for optical interconnections 多波长mbe再生垂直腔激光阵列与折射微透镜集成用于光学互连
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553760
E. Strzelecka, T. Wipiejewski, J. Ko, B. Thibeault, L. Coldren
{"title":"Multiple-wavelength MBE-regrown vertical-cavity laser arrays integrated with refractive microlenses for optical interconnections","authors":"E. Strzelecka, T. Wipiejewski, J. Ko, B. Thibeault, L. Coldren","doi":"10.1109/ISLC.1996.553760","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553760","url":null,"abstract":"An array of 7 multiple-wavelength MBE-regrown InGaAs QW VCSELs with 15 nm span and 30 /spl mu/m pitch is monolithically integrated with a refractive GaAs microlens on the back surface. The lens collimates individual beams to a divergence half angle <1.5/spl deg/ and separates them by /spl sim/5.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129789898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
General time-domain simulator for optical systems incorporating semiconductor lasers and amplifiers 用于集成半导体激光器和放大器的光学系统的通用时域模拟器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553774
J. Whiteaway
{"title":"General time-domain simulator for optical systems incorporating semiconductor lasers and amplifiers","authors":"J. Whiteaway","doi":"10.1109/ISLC.1996.553774","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553774","url":null,"abstract":"It is essential when designing high performance optical systems to consider the complex interactions between components. This paper describes a detailed model that simulates the optical interactions in systems incorporating semiconductor lasers and amplifiers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intracavity quantum-well photodetection of a vertical-cavity surface-emitting laser 垂直腔面发射激光器的腔内量子阱光探测
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558846
S.F. Lim, G.S. Li, W. Yuen, C. Chang-Hasnain
{"title":"Intracavity quantum-well photodetection of a vertical-cavity surface-emitting laser","authors":"S.F. Lim, G.S. Li, W. Yuen, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.558846","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558846","url":null,"abstract":"Summary form only given. We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132469534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信