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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Wide-temperature-range operation of 1.3 /spl mu/m DFB lasers with low distortion for analog transmission 1.3 /spl mu/m低失真DFB激光器的宽温度范围工作，用于模拟传输
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558789
H. Watanabe, K. Shibata, T. Aoyagi, T. Takiguchi, H. Higuchi, M. Aiga
{"title":"Wide-temperature-range operation of 1.3 /spl mu/m DFB lasers with low distortion for analog transmission","authors":"H. Watanabe, K. Shibata, T. Aoyagi, T. Takiguchi, H. Higuchi, M. Aiga","doi":"10.1109/ISLC.1996.558789","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558789","url":null,"abstract":"We have clarified a mechanism for the degradation of linearity at high temperature, and successfully realized low-distortion 1.3 /spl mu/m DFB lasers operating over a wide-temperature-range. Those lasers can be applied to bi-directional CATV distribution systems without any coolers. A carrier overflow is found to be a dominant factor determining the distortion at high temperatures. Devices with low leakage current have realized low distortion less than -50 dBc at 65/spl deg/C in 78-channel CSO measurements.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128932100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stable linearly polarized light emission from VCSELs with oxidized elliptical current aperture 氧化椭圆电流孔径vcsel的稳定线偏振光发射
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553728
U. Fiedler, D. Wiedenmann, B. Weigl, C. Jung, G. Reiner, M. Buck, K. Ebeling
{"title":"Stable linearly polarized light emission from VCSELs with oxidized elliptical current aperture","authors":"U. Fiedler, D. Wiedenmann, B. Weigl, C. Jung, G. Reiner, M. Buck, K. Ebeling","doi":"10.1109/ISLC.1996.553728","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553728","url":null,"abstract":"Summary form only given. We have fabricated oxidized InGaAs MQW VCSELs with elliptical current aperture. The lasers emit linearly polarized light up to thermal roll over. The polarization extinction ratio of better than 20 dB is also maintained under 2.5 Gbit/s large signal amplitude modulation.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127521785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Improvement of spectrum characteristics in spot-size converter integrated lasers with tilted butt joint portion 倾斜对接部分光斑尺寸变换器集成激光器光谱特性的改进
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553751
Y. Itaya, Y. Tohmori, O. Mitomi, H. Okamoto, Y. Suzaki, T. Kurosaki, M. Wada, K. Kasaya, Y. Sakai, M. Okamoto
{"title":"Improvement of spectrum characteristics in spot-size converter integrated lasers with tilted butt joint portion","authors":"Y. Itaya, Y. Tohmori, O. Mitomi, H. Okamoto, Y. Suzaki, T. Kurosaki, M. Wada, K. Kasaya, Y. Sakai, M. Okamoto","doi":"10.1109/ISLC.1996.553751","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553751","url":null,"abstract":"Summary form only given. A spot-size converter integrated MQW laser with a tilted butt joint was fabricated to reduce reflection from the joint. It produced no degradation in bit error rate performance and repeatedly provided low threshold current and low coupling loss to the cleaved fiber in 2 inch wafer process.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127851215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes 512nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH激光二极管的大功率连续波工作
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558769
N. Nakayama, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi
{"title":"High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes","authors":"N. Nakayama, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi","doi":"10.1109/ISLC.1996.558769","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558769","url":null,"abstract":"Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126385745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode 半绝缘埋置异质结构侧注光控双稳激光二极管
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553735
T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, H. Mori, T. Kurokawa
{"title":"Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode","authors":"T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, H. Mori, T. Kurokawa","doi":"10.1109/ISLC.1996.553735","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553735","url":null,"abstract":"We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"343 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122254176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical formulation of the spatial hole burning induced distortion in DFB lasers and some implications for CATV laser design DFB激光器空间孔烧致畸变的解析公式及其对有线电视激光器设计的启示
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558795
G. Morthier, R. Baets
{"title":"Analytical formulation of the spatial hole burning induced distortion in DFB lasers and some implications for CATV laser design","authors":"G. Morthier, R. Baets","doi":"10.1109/ISLC.1996.558795","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558795","url":null,"abstract":"We present an analytical expression for the 2nd order harmonic distortion caused by spatial hole burning in CATV link DFB lasers. The formula, which readily shows the influence of material and structural parameters, is then used to optimise the device structure for minimum harmonic distortion. A rather unexpected influence of the /spl alpha/-factor is also reported.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131376368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Two simultaneous wavelength and ultrahigh repetition rate operation of a harmonically injection locked diode laser 谐波注入锁定二极管激光器的双波长同步和超高重复频率工作
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553749
Mordehai Margalit, M. Orenstein, G. Eisenstein, E. Portnoi, G. Venus, A. A. Khazan
{"title":"Two simultaneous wavelength and ultrahigh repetition rate operation of a harmonically injection locked diode laser","authors":"Mordehai Margalit, M. Orenstein, G. Eisenstein, E. Portnoi, G. Venus, A. A. Khazan","doi":"10.1109/ISLC.1996.553749","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553749","url":null,"abstract":"Dual harmonic injection locking of a passively mode-locked diode laser yielded a simultaneous emission of two /spl sim/100 GHz pulse trains at two different wavelengths. High pulse rates exceeding /spl sim/900 GHz were obtained using a single locking source. The passively mode-locked diode laser was a Fabry-Perot laser based on a InGaAs/InGaAsP multiple quantum well layer structure operating near 1540 nm.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132832571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide temperature range linear DFB lasers at 1.3 /spl mu/m with very low threshold 宽温度范围线性DFB激光器1.3 /spl μ m /m，极低阈值
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558791
T.R. Chen, P.C. Chen, J. Ungar, S. Oh, H. Luong, N. Bar-chaim
{"title":"Wide temperature range linear DFB lasers at 1.3 /spl mu/m with very low threshold","authors":"T.R. Chen, P.C. Chen, J. Ungar, S. Oh, H. Luong, N. Bar-chaim","doi":"10.1109/ISLC.1996.558791","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558791","url":null,"abstract":"Singlemode operation between -50/spl deg/C and 110/spl deg/C with an SMSR of 40 dB and very low threshold current of 1.4 mA has been demonstrated in a strained MQW InGaAsP-InP linear DFB laser operating at 1.3 /spl mu/m wavelength.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122877685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers InGaAsP-InP量子阱激光器中载流子捕获和逃逸分析
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553767
A. G. Plyavenek, A. V. Lyubarskii
{"title":"Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers","authors":"A. G. Plyavenek, A. V. Lyubarskii","doi":"10.1109/ISLC.1996.553767","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553767","url":null,"abstract":"We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125406508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of 680-nm window laser diodes at 50-100 mW CW operation 680nm窗口激光二极管在50- 100mw连续工作下的可靠性
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558766
A. Shima, H. Tada, T. Utakouji, T. Motoda, M. Tsugami, H. Higuchi, M. Aiga
{"title":"Reliability of 680-nm window laser diodes at 50-100 mW CW operation","authors":"A. Shima, H. Tada, T. Utakouji, T. Motoda, M. Tsugami, H. Higuchi, M. Aiga","doi":"10.1109/ISLC.1996.558766","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558766","url":null,"abstract":"By reduction of the operating current density due to a long cavity length of 900 /spl mu/m, reliable 5,000-hour operation of 680-nm window lasers has been realized under the conditions of 70 mW at 60/spl deg/C and 100 mW at 40/spl deg/C for the first time.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125545917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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