Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553735

T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, H. Mori, T. Kurokawa

引用次数: 0

Abstract

We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.

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半绝缘埋置异质结构侧注光控双稳激光二极管

我们首次利用氢化物气相外延(HVPE)证明了埋有半绝缘InP的侧注入光控双稳激光二极管(SILC-BLD)的光学响应。两个定向台地周围的埋藏表面都是平坦的。通过在饱和吸收区施加控制电压获得双稳态工作。注入光信号的调制带宽f/sub 3dB/超过3.5 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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