{"title":"下一代微腔激光器的光子微结构","authors":"T. Krauss, Richard M. De La Rue","doi":"10.1109/ISLC.1996.558850","DOIUrl":null,"url":null,"abstract":"Summary form only given. We present the first experimental demonstration of a two-dimensional photonic bandgap (2D PBG) at optical wavelengths and the localisation of light at a defect in a lD PBG structure. These are major milestones for a novel class of waveguide based GaAs-AlGaAs microcavity semiconductor lasers with very low threshold, reduced noise and a substantial degree of spontaneous emission control.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photonic microstructures for the next generation of microcavity lasers\",\"authors\":\"T. Krauss, Richard M. De La Rue\",\"doi\":\"10.1109/ISLC.1996.558850\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We present the first experimental demonstration of a two-dimensional photonic bandgap (2D PBG) at optical wavelengths and the localisation of light at a defect in a lD PBG structure. These are major milestones for a novel class of waveguide based GaAs-AlGaAs microcavity semiconductor lasers with very low threshold, reduced noise and a substantial degree of spontaneous emission control.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.558850\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.558850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photonic microstructures for the next generation of microcavity lasers
Summary form only given. We present the first experimental demonstration of a two-dimensional photonic bandgap (2D PBG) at optical wavelengths and the localisation of light at a defect in a lD PBG structure. These are major milestones for a novel class of waveguide based GaAs-AlGaAs microcavity semiconductor lasers with very low threshold, reduced noise and a substantial degree of spontaneous emission control.