T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, H. Mori, T. Kurokawa
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We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.
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