{"title":"InGaAsP-InP量子阱激光器中载流子捕获和逃逸分析","authors":"A. G. Plyavenek, A. V. Lyubarskii","doi":"10.1109/ISLC.1996.553767","DOIUrl":null,"url":null,"abstract":"We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers\",\"authors\":\"A. G. Plyavenek, A. V. Lyubarskii\",\"doi\":\"10.1109/ISLC.1996.553767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers
We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.
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