Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553767

A. G. Plyavenek, A. V. Lyubarskii

引用次数: 2

Abstract

We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.

查看原文本刊更多论文

InGaAsP-InP量子阱激光器中载流子捕获和逃逸分析

我们证明了在InGaAsP-InP量子阱激光器中，空间电荷和三维载流子在量子阱边界的反射效应在决定有效捕获和逃逸时间方面起着主导作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量