512nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH激光二极管的大功率连续波工作

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.558769

N. Nakayama, S. Taniguchi, T. Hino, K. Nakano, A. Ishibashi

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引用次数: 1

摘要

利用分子束外延技术(MBE)在GaAs衬底上生长的ZnCdSe/ZnSSe/ZnMgSSe单量子阱(SQW)分离约束异质结构(SCH)激光二极管，在室温和60/spl℃下分别获得了87 mW和30 mW的连续输出光功率。

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High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes

Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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