G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata
{"title":"Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling","authors":"G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata","doi":"10.1109/ISLC.1996.553752","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553752","url":null,"abstract":"Summary form only given. In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121900181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Margalit, D. Babic, K. Streubel, R. Mirin, R. Naone, John E. Bowers, Evelyn L. Hu
{"title":"Submilliamp long wavelength vertical cavity lasers","authors":"N. Margalit, D. Babic, K. Streubel, R. Mirin, R. Naone, John E. Bowers, Evelyn L. Hu","doi":"10.1049/EL:19961099","DOIUrl":"https://doi.org/10.1049/EL:19961099","url":null,"abstract":"We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121291063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}