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Confinement effects of AlAs native-oxide apertures buried in quantum well lasers 埋在量子阱激光器中的AlAs原生氧化物孔的约束效应
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553726
Yong Cheng, M. MacDougal, Chao-Kun Lin, P. Dapkus
{"title":"Confinement effects of AlAs native-oxide apertures buried in quantum well lasers","authors":"Yong Cheng, M. MacDougal, Chao-Kun Lin, P. Dapkus","doi":"10.1109/ISLC.1996.553726","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553726","url":null,"abstract":"AlGaAs native-oxide apertures buried within epitaxial laser structures provide excellent current and optical confinement. We report here the experimental characterization and theoretical analysis of these confinement effects in quantum well lasers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133687409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Submilliamp long wavelength vertical cavity lasers 亚毫安长波垂直腔激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-08-29 DOI: 10.1049/EL:19961099
N. Margalit, D. Babic, K. Streubel, R. Mirin, R. Naone, John E. Bowers, Evelyn L. Hu
{"title":"Submilliamp long wavelength vertical cavity lasers","authors":"N. Margalit, D. Babic, K. Streubel, R. Mirin, R. Naone, John E. Bowers, Evelyn L. Hu","doi":"10.1049/EL:19961099","DOIUrl":"https://doi.org/10.1049/EL:19961099","url":null,"abstract":"We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121291063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 78
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