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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers 高效选择性氧化砷化镓(/spl λ /=830 nm)垂直腔激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553757
B. Weigl, G. Reiner, M. Grabherr, K. Ebeling
{"title":"Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers","authors":"B. Weigl, G. Reiner, M. Grabherr, K. Ebeling","doi":"10.1109/ISLC.1996.553757","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553757","url":null,"abstract":"We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114451469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells GaInN-GaN和GaN-AlGaN双异质结构和量子阱中室温光增益的实验分析
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558773
A. Hangleiter, G. Frankowsky, V. Harle, F. Steuber, F. Scholz
{"title":"Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells","authors":"A. Hangleiter, G. Frankowsky, V. Harle, F. Steuber, F. Scholz","doi":"10.1109/ISLC.1996.558773","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558773","url":null,"abstract":"We have studied the optical gain in nitride-based laser structures. We find evidence for excitonic gain at room temperature. A strong polarization dependence of the gain is observed, in accordance with the band structure. We have used optical gain spectroscopy employing the stripe excitation method in order to elucidate the mechanisms of optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114221046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wavelength trimming technology for multiple-wavelength distributed-feedback laser arrays 多波长分布反馈激光阵列的波长微调技术
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1049/EL:19970134
T. Sudoh, Y. Nakano, K. Tada
{"title":"Wavelength trimming technology for multiple-wavelength distributed-feedback laser arrays","authors":"T. Sudoh, Y. Nakano, K. Tada","doi":"10.1049/EL:19970134","DOIUrl":"https://doi.org/10.1049/EL:19970134","url":null,"abstract":"We describe a novel post-fabrication adjustment method of the oscillation wavelength in distributed feedback lasers where no external control is necessary. The method makes use of refractive index change induced by light irradiation. \"Wavelength trimming\" of 0.8 /spl Aring/ at 1.55 /spl mu/m is demonstrated.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117139932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer 1.3 /spl mu/m高T/sub /应变MQW激光器，在异质外延InGaAs缓冲层上使用AlGaInAs SCH层
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553753
H. Kurakake, T. Uchida, T. Higashi, S. Ogita, M. Kobayashi
{"title":"1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer","authors":"H. Kurakake, T. Uchida, T. Higashi, S. Ogita, M. Kobayashi","doi":"10.1109/ISLC.1996.553753","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553753","url":null,"abstract":"The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116161997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing 快速热退火制备低阈值mbe生长AlInGaAs-AlGaAs应变多量子阱激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1049/EL:19961378
J. Ko, Ching-Hui Chen, L. Coldren, E. Hu
{"title":"Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing","authors":"J. Ko, Ching-Hui Chen, L. Coldren, E. Hu","doi":"10.1049/EL:19961378","DOIUrl":"https://doi.org/10.1049/EL:19961378","url":null,"abstract":"With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122517546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
First order single mode DBR laser diodes emitting in the blue-green spectral range 一阶单模DBR激光二极管在蓝-绿光谱范围内发射
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558770
D. Eisert, M. Legge, G. Bacher, A. Forchel, J. Nurnberger, K. Schull, G. Landwehr
{"title":"First order single mode DBR laser diodes emitting in the blue-green spectral range","authors":"D. Eisert, M. Legge, G. Bacher, A. Forchel, J. Nurnberger, K. Schull, G. Landwehr","doi":"10.1109/ISLC.1996.558770","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558770","url":null,"abstract":"First order DBR laser diodes were realized based on II-VI separate confinement heterostructures. The emission spectrum at room temperature is characterized by longitudinal single mode emission at a wavelength of about 520 nm adjustable by the grating period.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132322418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Lasing mechanisms and optical gain in visible-bandgap II-VI quantum well structures 可见带隙II-VI量子阱结构中的激光机制和光增益
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558768
F. Henneberger, F. Kreller, J. Puls, H. Wunsche
{"title":"Lasing mechanisms and optical gain in visible-bandgap II-VI quantum well structures","authors":"F. Henneberger, F. Kreller, J. Puls, H. Wunsche","doi":"10.1109/ISLC.1996.558768","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558768","url":null,"abstract":"The origin of lasing in (Zn,Cd)Se/ZnSe quantum well structures is elucidated in a temperature range between 5 and 300 K. We observe very large bi-exciton gain (2.5/spl middot/10/sup 4/ cm/sup -1/), turning into less efficient electron-hole plasma recombination above 160 K.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117020154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity 孔径为100 /spl μ m，无铝，0.98 /spl μ m的大光腔二极管激光器，功率为8 W
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553723
L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev
{"title":"8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity","authors":"L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev","doi":"10.1109/ISLC.1996.553723","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553723","url":null,"abstract":"By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116823532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling p掺杂谱线对应变多量子阱InGaAsP-InP激光器性能的影响:实验与建模
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553752
G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata
{"title":"Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling","authors":"G. Belenky, C. Reynolds, R. Kazarinov, V. Swaminathan, S. Luryi, J. Lopata","doi":"10.1109/ISLC.1996.553752","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553752","url":null,"abstract":"Summary form only given. In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121900181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental demonstration of the combined phase and amplitude facet reflectivity effects on the chirp of a 10 Gbit/s integrated laser-modulator source 相位和振幅面联合反射率对10gbit /s集成激光调制器源啁啾影响的实验论证
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558754
A. Lestra, P. Brosson, O. Le Gouezigou, D. Lesterlin, J. Provost
{"title":"Experimental demonstration of the combined phase and amplitude facet reflectivity effects on the chirp of a 10 Gbit/s integrated laser-modulator source","authors":"A. Lestra, P. Brosson, O. Le Gouezigou, D. Lesterlin, J. Provost","doi":"10.1109/ISLC.1996.558754","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558754","url":null,"abstract":"Summary form only. We experimentally show that laser and modulator facet phases with respect to the DFB laser grating are as important for the chirp as the modulator facet reflectivity given a 10 Gbit/s integrated laser-modulator source. We have presented a way to assess not only the modulator induced chirp but also the laser induced chirp of an integrated laser-modulator device. We have shown the influence of the modulator facet reflectivity and the major role of the facet phase versus the DFB laser grating on the chirp. We conclude that the facet reflectivity determines the 10 Gbit/s performance yield rather than individual chip behaviour.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130064791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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