可见带隙II-VI量子阱结构中的激光机制和光增益

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.558768

F. Henneberger, F. Kreller, J. Puls, H. Wunsche

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摘要

研究了(Zn,Cd)Se/ZnSe量子阱结构在5 ~ 300 K温度范围内产生激光的原因。我们观察到非常大的双激子增益(2.5/spl中点/10/sup / 4/ cm/sup -1/)，在160 K以上变成效率较低的电子-空穴等离子体复合。

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Lasing mechanisms and optical gain in visible-bandgap II-VI quantum well structures

The origin of lasing in (Zn,Cd)Se/ZnSe quantum well structures is elucidated in a temperature range between 5 and 300 K. We observe very large bi-exciton gain (2.5/spl middot/10/sup 4/ cm/sup -1/), turning into less efficient electron-hole plasma recombination above 160 K.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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