快速热退火制备低阈值mbe生长AlInGaAs-AlGaAs应变多量子阱激光器

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1049/EL:19961378

J. Ko, Ching-Hui Chen, L. Coldren, E. Hu

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引用次数: 14

摘要

采用生长后快速热退火(RTA)技术，利用固体源分子束外延(MBE)生长818 nm应变Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As多量子阱(MQW)激光器显示出创纪录的低阈值电流密度，为83 a/ cm/sup 2/每阱。用相同材料制备的脊波导激光器显示出5 mA的脉冲阈值电流和62%的差分量子效率。

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Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing

With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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