GaInN-GaN和GaN-AlGaN双异质结构和量子阱中室温光增益的实验分析

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.558773

A. Hangleiter, G. Frankowsky, V. Harle, F. Steuber, F. Scholz

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引用次数: 2

摘要

我们研究了氮基激光器结构的光增益。我们发现了室温下激子增益的证据。根据波段结构，观察到增益的强偏振依赖性。为了阐明GaInN-GaN和GaN-AlGaN双异质结构和量子阱中光增益的机制，我们采用条纹激发法的光学增益光谱。

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Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells

We have studied the optical gain in nitride-based laser structures. We find evidence for excitonic gain at room temperature. A strong polarization dependence of the gain is observed, in accordance with the band structure. We have used optical gain spectroscopy employing the stripe excitation method in order to elucidate the mechanisms of optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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