8 W CW front-facet power from 100 /spl mu/m-aperture, Al-free, 0.98 /spl mu/m diode lasers with large optical cavity

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553723

L. Mawst, A. Bhattacharya, J. Lopez, D. Botez, D. Garbuzov, L. DeMarco, J. Connolly, M. Jansen, F. Fang, R. Nabiev

引用次数: 0

Abstract

By increasing the optical-cavity thickness of SCH-SL-DQW InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m) lasers from 0.2 /spl mu/m to 1.0 /spl mu/m the internal loss decreases fivefold to /spl sim/1.5 cm/sup -1/, and the transverse spot size doubles to 0.6 /spl mu/m (FWHM). As a result, 100 /spl mu/m-aperture devices emit up to 8.1 W CW from their front facets.

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孔径为100 /spl μ m，无铝，0.98 /spl μ m的大光腔二极管激光器，功率为8 W

将sh - sl - dqw InGaAs/InGaP/GaAs (/spl lambda/=0.98 /spl mu/m)激光器的光腔厚度从0.2 /spl mu/m增加到1.0 /spl mu/m，内部损耗降低5倍至/spl sim/1.5 cm/sup -1/，横向光斑尺寸增加一倍至0.6 /spl mu/m (FWHM)。因此，100 /spl mu/m孔径的器件从其正面发射高达8.1 W的连续波。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

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