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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Transient gain-spectra and bandgap-renormalization dynamics in ultrashort optical pulse excited InGaAs-InGaAsP multi-quantum-well laser structure 超短光脉冲激发InGaAs-InGaAsP多量子阱激光结构的瞬态增益光谱和带隙重整化动力学
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558780
Jian Wang, F. Adler, H. Schweizer
{"title":"Transient gain-spectra and bandgap-renormalization dynamics in ultrashort optical pulse excited InGaAs-InGaAsP multi-quantum-well laser structure","authors":"Jian Wang, F. Adler, H. Schweizer","doi":"10.1109/ISLC.1996.558780","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558780","url":null,"abstract":"Time-development of transient optical net gain spectra of InGaAs-InGaAsP MQW laser structure after ultrashort pulse excitation was measured. With theoretical simulation, the dynamics of carrier density, carrier temperature and bandgap renormalization and their influences on transient gain were investigated.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116055279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel self-chirped VCSEL with a micromechanical resonator 带有微机械谐振器的新型自啁啾VCSEL
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558845
E. Vail, G.S. Li, W. Yuen, C. Chang-Hasnain
{"title":"Novel self-chirped VCSEL with a micromechanical resonator","authors":"E. Vail, G.S. Li, W. Yuen, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.558845","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558845","url":null,"abstract":"We demonstrate a self-chirping VCSEL laser diode with a 10 nm bandwidth, sub-milliamp threshold, and 0.2 mW total power in a single mode. The self-chirping is achieved by integrating the VCSEL with a micromechanical resonator and biasing with a feedback load.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121348219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental observation of localized luminescence clamping in complex-coupled DFB laser diodes 复合耦合DFB激光二极管局部发光箝位的实验观察
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558793
M. Achtenhagen, R. Miles, F. Reinhart
{"title":"Experimental observation of localized luminescence clamping in complex-coupled DFB laser diodes","authors":"M. Achtenhagen, R. Miles, F. Reinhart","doi":"10.1109/ISLC.1996.558793","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558793","url":null,"abstract":"The longitudinal dependence of the standing wave in a complex-coupled DFB laser is experimentally investigated. We have observed localized clamping of the luminescence for unstable operation conditions such as multi-mode emission. We present measurements of the variation in luminescence as a function of position along the laser cavity length for various relative phases between facets and grating. We impose these conditions by systematically depositing layers of Ge to change the relative facet-to-grating distance in an InGaAsP MQW complex coupled DFB laser. A model based on standing-wave considerations is used to explain the experimental findings.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115360592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser by modulated distribution of injection current 采用调制注入电流分布的新型复合耦合MQW-DFB激光器1.31 /spl μ m
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553750
Zhang Jizhi, Wang Wei, Zhang Jingyuan, Wang Xiaojie, Li Li, Zhu Hongliang, Wang Zhijie, Zhou Fan, Ma Chao-hua
{"title":"A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser by modulated distribution of injection current","authors":"Zhang Jizhi, Wang Wei, Zhang Jingyuan, Wang Xiaojie, Li Li, Zhu Hongliang, Wang Zhijie, Zhou Fan, Ma Chao-hua","doi":"10.1109/ISLC.1996.553750","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553750","url":null,"abstract":"A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser was fabricated for the first time by means of modulated distribution of injection current and its peculiar characteristics was described.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115495179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Constant output power and low linewidth in a simple wide tuning DFB laser with multiwavelength grating 一种简单的多波长光栅宽调谐DFB激光器的恒定输出功率和低线宽
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/2944.605714
A. Talneau, S. Slempkes, A. Ougazzaden
{"title":"Constant output power and low linewidth in a simple wide tuning DFB laser with multiwavelength grating","authors":"A. Talneau, S. Slempkes, A. Ougazzaden","doi":"10.1109/2944.605714","DOIUrl":"https://doi.org/10.1109/2944.605714","url":null,"abstract":"Wide tuning DFB-type oscillation from a DFB-DBR InGaAsP strained QW laser is reported. DFB modes defined by a multiwavelength grating (MWG) in the active section are selected by tuning the passive section current. Upon tuning, output power remains constant and linewidth remains lower than 5 MHz.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127416061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical gain for wurtzite GaN with anisotropic strain in c-plane c平面各向异性应变纤锌矿GaN的光学增益
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1063/1.118457
K. Domen, K. Horino, A. Kuramata, T. Tanahashi
{"title":"Optical gain for wurtzite GaN with anisotropic strain in c-plane","authors":"K. Domen, K. Horino, A. Kuramata, T. Tanahashi","doi":"10.1063/1.118457","DOIUrl":"https://doi.org/10.1063/1.118457","url":null,"abstract":"We calculated band structures of (1100)-oriented GaN with various strains. We found that introducing anisotropic strain in the c-plane split the heavy hole and light hole bands, resulting in reduction of the transparent carrier density.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128636573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 54
High-speed modulation characteristics of oxide-apertured vertical-cavity laser 氧化孔垂直腔激光器的高速调制特性
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553727
B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren
{"title":"High-speed modulation characteristics of oxide-apertured vertical-cavity laser","authors":"B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren","doi":"10.1109/ISLC.1996.553727","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553727","url":null,"abstract":"Summary form only given. In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 /spl mu/m diameter device. We show that the intrinsic speed is limited to /spl sim/46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131240243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Separate-confinement vertical quantum well-lasers grown by self-ordering on V-grooved substrates 在v型沟槽基底上自序生长的分离约束垂直量子阱激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553741
P. Ils, A. Gustafsson, N. Chiriotti, E. Kapon
{"title":"Separate-confinement vertical quantum well-lasers grown by self-ordering on V-grooved substrates","authors":"P. Ils, A. Gustafsson, N. Chiriotti, E. Kapon","doi":"10.1109/ISLC.1996.553741","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553741","url":null,"abstract":"We fabricated and studied separate confinement (SC) vertical quantum well (VQW) AlGaAs lasers formed by self-ordering on V-grooved substrates. Quantum confinement in the vertical quantum well is evidenced by the TM polarized output.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128802245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detuning characteristics of a subharmonically hybrid mode-locked monolithic semiconductor laser 亚谐波混合锁模单片半导体激光器的失谐特性
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553747
T. Hoshida, H. Liu, M. Tsuchiya, Y. Ogawa, T. Kamiya
{"title":"Detuning characteristics of a subharmonically hybrid mode-locked monolithic semiconductor laser","authors":"T. Hoshida, H. Liu, M. Tsuchiya, Y. Ogawa, T. Kamiya","doi":"10.1109/ISLC.1996.553747","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553747","url":null,"abstract":"The detuning characteristics of subharmonic hybrid mode-locking (SH-ML) of a monolithic semiconductor laser at 33 GHz are investigated. We used a 1.55 /spl mu/m semiconductor laser consisting of a saturable absorber (SA), a gain, a phase control, and a DBR section. A locking bandwidth of 56 MHz is obtained under the third order SH-ML, which is more than twice larger than that under the fundamental hybrid mode-locking (FH-ML).","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133626690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Confinement effects of AlAs native-oxide apertures buried in quantum well lasers 埋在量子阱激光器中的AlAs原生氧化物孔的约束效应
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553726
Yong Cheng, M. MacDougal, Chao-Kun Lin, P. Dapkus
{"title":"Confinement effects of AlAs native-oxide apertures buried in quantum well lasers","authors":"Yong Cheng, M. MacDougal, Chao-Kun Lin, P. Dapkus","doi":"10.1109/ISLC.1996.553726","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553726","url":null,"abstract":"AlGaAs native-oxide apertures buried within epitaxial laser structures provide excellent current and optical confinement. We report here the experimental characterization and theoretical analysis of these confinement effects in quantum well lasers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133687409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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