Separate-confinement vertical quantum well-lasers grown by self-ordering on V-grooved substrates

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553741

P. Ils, A. Gustafsson, N. Chiriotti, E. Kapon

引用次数: 0

Abstract

We fabricated and studied separate confinement (SC) vertical quantum well (VQW) AlGaAs lasers formed by self-ordering on V-grooved substrates. Quantum confinement in the vertical quantum well is evidenced by the TM polarized output.

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在v型沟槽基底上自序生长的分离约束垂直量子阱激光器

在v型沟槽衬底上制备并研究了自有序分离约束垂直量子阱(VQW) AlGaAs激光器。垂直量子阱中的量子约束由TM偏振输出证明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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