氧化孔垂直腔激光器的高速调制特性

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553727

B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren

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引用次数: 2

摘要

只提供摘要形式。本文研究了氧化孔垂直腔InGaAs-GaAs DBR QW激光器的调制特性。在3.1 /spl mu/m直径器件上，仅2.1 mA电流下的带宽为15.3 GHz，最先进的调制电流效率为14 GHz/mA/sup 1/2 /。我们表明，通过增益压缩，固有速度被限制在/spl sim/46 GHz，而10 GHz的寄生限制了当前器件的性能。

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High-speed modulation characteristics of oxide-apertured vertical-cavity laser

Summary form only given. In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 /spl mu/m diameter device. We show that the intrinsic speed is limited to /spl sim/46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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