c平面各向异性应变纤锌矿GaN的光学增益

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1063/1.118457

K. Domen, K. Horino, A. Kuramata, T. Tanahashi

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引用次数: 54

摘要

我们计算了不同应变下(1100)取向GaN的能带结构。我们发现在c面引入各向异性应变导致重空穴带和轻空穴带分裂，导致透明载流子密度降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical gain for wurtzite GaN with anisotropic strain in c-plane

We calculated band structures of (1100)-oriented GaN with various strains. We found that introducing anisotropic strain in the c-plane split the heavy hole and light hole bands, resulting in reduction of the transparent carrier density.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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