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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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Actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings 主动锁模激光器集成了电吸收调制器和啁啾光栅
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553746
K. Sato, H. Ishii, I. Fotaka, Y. Kondo, M. Yamamoto
{"title":"Actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings","authors":"K. Sato, H. Ishii, I. Fotaka, Y. Kondo, M. Yamamoto","doi":"10.1109/ISLC.1996.553746","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553746","url":null,"abstract":"We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A schematic drawing of the monolithic laser integrated with an EA modulator and a distributed Bragg reflector (DBR) is shown. Short pulses of less than 6 ps were generated over a wide frequency range from 18.9 GHz to 19.8 GHz.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122306702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range 在77- 300k温度范围内具有亚毫安阈值电流的腔内接触垂直腔激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558803
Y. Akulova, B. Thibeault, J. Ko, L. Coldren
{"title":"Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range","authors":"Y. Akulova, B. Thibeault, J. Ko, L. Coldren","doi":"10.1109/ISLC.1996.558803","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558803","url":null,"abstract":"Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130029692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wavelength and threshold current stabilization of an uncooled diode laser, using thermal stress 利用热应力稳定非冷却二极管激光器的波长和阈值电流
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558763
D. Cohen, L. Coldren
{"title":"Wavelength and threshold current stabilization of an uncooled diode laser, using thermal stress","authors":"D. Cohen, L. Coldren","doi":"10.1109/ISLC.1996.558763","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558763","url":null,"abstract":"We show that strain from differential thermal expansion may be used to stabilize the wavelength and threshold current of an uncooled GaInAs/InP laser, and demonstrate a 50% reduction in wavelength drift, using a thermal-stress-engineered package.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123188635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced modulation bandwidth and self-pulsations in detuned loaded InGaAsP DBR-lasers 失谐负载InGaAsP dbr激光器的增强调制带宽和自脉冲
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553763
R. Schatz, O. Kjebon, S. Lourdudoss, S. Nilsson, B. Stalnacke
{"title":"Enhanced modulation bandwidth and self-pulsations in detuned loaded InGaAsP DBR-lasers","authors":"R. Schatz, O. Kjebon, S. Lourdudoss, S. Nilsson, B. Stalnacke","doi":"10.1109/ISLC.1996.553763","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553763","url":null,"abstract":"A strong undamping of the relaxation peak leading to self-pulsations and a record high modulation bandwidth (26 GHz) were observed in 1.55 /spl mu/m InGaAsP DBR QW lasers. These results are attributed to the mechanism of detuned loading.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117041358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Dynamical simulation of flared semiconductor amplifiers for repetitive picosecond pulse amplification 重复皮秒脉冲放大的喇叭半导体放大器的动力学仿真
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558788
B. Dagens, S. Balsamo, I. Montrosset
{"title":"Dynamical simulation of flared semiconductor amplifiers for repetitive picosecond pulse amplification","authors":"B. Dagens, S. Balsamo, I. Montrosset","doi":"10.1109/ISLC.1996.558788","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558788","url":null,"abstract":"We present a comprehensive model of picosecond pulse propagation in a flared semiconductor optical amplifier including the indirect interaction between successive pulses due to carrier depletion and partial recovering by diffusion and recombination.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132607512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control 用单片集成异质结光电晶体管的深红色垂直腔面发射激光器，用于输出功率控制
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558847
J. Lott, Hyun-kuk Shin, Yong-Hee Lee
{"title":"Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control","authors":"J. Lott, Hyun-kuk Shin, Yong-Hee Lee","doi":"10.1109/ISLC.1996.558847","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558847","url":null,"abstract":"Summary form only given. A heterojunction phototransistor is placed within the lower mirror of an AlGaAs DBR QW VCSEL laser. By sampling a small fraction of the internal optical power, the phototransistor controls the laser's continuous wave output power which has an application in optical disc storage systems.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131183311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer 与n型/spl δ /掺杂层耦合的应变量子阱激光器的超低透明电流密度
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553740
O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete
{"title":"Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer","authors":"O. Buchinsky, M. Blumin, R. Sarfaty, D. Fekete","doi":"10.1109/ISLC.1996.553740","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553740","url":null,"abstract":"By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128181977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams 聚焦离子束制备增益耦合DFB激光二极管的新方法
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553761
E. Hofling, A. Orth, J. Reithmaier, A. Forchel
{"title":"A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams","authors":"E. Hofling, A. Orth, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.1996.553761","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553761","url":null,"abstract":"Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-chirp wavelength-selectable 1/spl times/6 laser arrays suitable for WDM applications 低啁啾波长可选1/spl次/6激光阵列适用于波分复用应用
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558755
B. Miller, K. Dreyer, R. Behringer, U. Koren, M. Chien, G. Raybon, D. Tennant, K. Feder, R. Capik
{"title":"Low-chirp wavelength-selectable 1/spl times/6 laser arrays suitable for WDM applications","authors":"B. Miller, K. Dreyer, R. Behringer, U. Koren, M. Chien, G. Raybon, D. Tennant, K. Feder, R. Capik","doi":"10.1109/ISLC.1996.558755","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558755","url":null,"abstract":"Seven packaged wavelength selectable laser arrays were tested and found to have average chirp parameter of 0.18 /spl Aring/ under 2.5 Gb/Sec modulation. Temperature tuning necessary to reach a standard WDM wavelength for any laser on any of the packages was /spl les/5.2/spl deg/C.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116377060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
In situ thickness monitoring and adjusting during MBE growth for VCSEL VCSEL MBE生长过程中的原位厚度监测与调整
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553759
Z. Pan, Zengqi Zhou, Yaowang Lin, Z. Niu, Yi Zhang, R. Wu, Wei Wang
{"title":"In situ thickness monitoring and adjusting during MBE growth for VCSEL","authors":"Z. Pan, Zengqi Zhou, Yaowang Lin, Z. Niu, Yi Zhang, R. Wu, Wei Wang","doi":"10.1109/ISLC.1996.553759","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553759","url":null,"abstract":"We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122572514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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