K. Sato, H. Ishii, I. Fotaka, Y. Kondo, M. Yamamoto
{"title":"主动锁模激光器集成了电吸收调制器和啁啾光栅","authors":"K. Sato, H. Ishii, I. Fotaka, Y. Kondo, M. Yamamoto","doi":"10.1109/ISLC.1996.553746","DOIUrl":null,"url":null,"abstract":"We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A schematic drawing of the monolithic laser integrated with an EA modulator and a distributed Bragg reflector (DBR) is shown. Short pulses of less than 6 ps were generated over a wide frequency range from 18.9 GHz to 19.8 GHz.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings\",\"authors\":\"K. Sato, H. Ishii, I. Fotaka, Y. Kondo, M. Yamamoto\",\"doi\":\"10.1109/ISLC.1996.553746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A schematic drawing of the monolithic laser integrated with an EA modulator and a distributed Bragg reflector (DBR) is shown. Short pulses of less than 6 ps were generated over a wide frequency range from 18.9 GHz to 19.8 GHz.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings
We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A schematic drawing of the monolithic laser integrated with an EA modulator and a distributed Bragg reflector (DBR) is shown. Short pulses of less than 6 ps were generated over a wide frequency range from 18.9 GHz to 19.8 GHz.