A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553761

E. Hofling, A. Orth, J. Reithmaier, A. Forchel

引用次数: 0

Abstract

Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.

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聚焦离子束制备增益耦合DFB激光二极管的新方法

利用聚焦离子束注入和后续的热退火制备了增益耦合分布反馈量子阱激光二极管。无涂层激光器件表现为单纵模发射，产率非常高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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