在77- 300k温度范围内具有亚毫安阈值电流的腔内接触垂直腔激光器

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.558803

Y. Akulova, B. Thibeault, J. Ko, L. Coldren

{"title":"在77- 300k温度范围内具有亚毫安阈值电流的腔内接触垂直腔激光器","authors":"Y. Akulova, B. Thibeault, J. Ko, L. Coldren","doi":"10.1109/ISLC.1996.558803","DOIUrl":null,"url":null,"abstract":"Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range\",\"authors\":\"Y. Akulova, B. Thibeault, J. Ko, L. Coldren\",\"doi\":\"10.1109/ISLC.1996.558803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.558803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.558803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了77 K时阈值电流为/spl sim/60 /spl mu/A、300 K时阈值电流为300 /spl mu/A的介电孔径双腔内接触垂直腔InGaAs QW激光器。由于量子阱的第二个量子化子带的激光，在300 K时单模输出功率高达1.65 mW。

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Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range

Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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