Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control

Abstract

Summary form only given. A heterojunction phototransistor is placed within the lower mirror of an AlGaAs DBR QW VCSEL laser. By sampling a small fraction of the internal optical power, the phototransistor controls the laser's continuous wave output power which has an application in optical disc storage systems.