VCSEL MBE生长过程中的原位厚度监测与调整

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553759

Z. Pan, Zengqi Zhou, Yaowang Lin, Z. Niu, Yi Zhang, R. Wu, Wei Wang

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引用次数: 0

摘要

我们研究了MBE-VCSEL在整个生长过程中衬底温度的明显振荡。在生长过程中测量了精确的生长速率和模式波长。实现了阈值电流小于200 /spl mu/A的InGaAs-GaAs VCSEL。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In situ thickness monitoring and adjusting during MBE growth for VCSEL

We study the apparent substrate temperature oscillation during the whole growth of MBE-VCSEL. The accurate growth rate and mode wavelength are measured during the growth. The InGaAs-GaAs VCSEL with threshold current less than 200 /spl mu/A was achieved.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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