采用调制注入电流分布的新型复合耦合MQW-DFB激光器1.31 /spl μ m

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553750

Zhang Jizhi, Wang Wei, Zhang Jingyuan, Wang Xiaojie, Li Li, Zhu Hongliang, Wang Zhijie, Zhou Fan, Ma Chao-hua

{"title":"采用调制注入电流分布的新型复合耦合MQW-DFB激光器1.31 /spl μ m","authors":"Zhang Jizhi, Wang Wei, Zhang Jingyuan, Wang Xiaojie, Li Li, Zhu Hongliang, Wang Zhijie, Zhou Fan, Ma Chao-hua","doi":"10.1109/ISLC.1996.553750","DOIUrl":null,"url":null,"abstract":"A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser was fabricated for the first time by means of modulated distribution of injection current and its peculiar characteristics was described.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser by modulated distribution of injection current\",\"authors\":\"Zhang Jizhi, Wang Wei, Zhang Jingyuan, Wang Xiaojie, Li Li, Zhu Hongliang, Wang Zhijie, Zhou Fan, Ma Chao-hua\",\"doi\":\"10.1109/ISLC.1996.553750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser was fabricated for the first time by means of modulated distribution of injection current and its peculiar characteristics was described.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553750\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用注入电流的调制分布，首次制备了1.31 /spl μ m的新型络合耦合MQW-DFB激光器，并描述了其特有的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser by modulated distribution of injection current

A 1.31 /spl mu/m novel complex-coupled MQW-DFB laser was fabricated for the first time by means of modulated distribution of injection current and its peculiar characteristics was described.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量