Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553757

B. Weigl, G. Reiner, M. Grabherr, K. Ebeling

引用次数: 2

Abstract

We have fabricated MBE grown, selectively oxidized multi-mode GaAs QW VCSELs with 730 /spl mu/A threshold, 8.5 mW output power and 40.3% conversion efficiency. Single-mode devices show 1.2 mW output power and better than 30 dB side mode suppression.

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高效选择性氧化砷化镓(/spl λ /=830 nm)垂直腔激光器

我们制备了MBE生长的选择性氧化多模GaAs QW VCSELs，其阈值为730 /spl mu/A，输出功率为8.5 mW，转换效率为40.3%。单模器件的输出功率为1.2 mW，侧模抑制优于30 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

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