Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling

Abstract

Summary form only given. In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.