Submilliamp long wavelength vertical cavity lasers

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-08-29 DOI:10.1049/EL:19961099

N. Margalit, D. Babic, K. Streubel, R. Mirin, R. Naone, John E. Bowers, Evelyn L. Hu

引用次数: 78

Abstract

We demonstrate an improved laterally oxidized long wavelength (1.55-/spl mu/m) InGaAsP vertical cavity DBR QW laser. The devices exhibit the first submilliamp threshold current as well as the highest reported CW (64/spl deg/C) and pulsed (85/spl deg/C) operating temperatures.

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亚毫安长波垂直腔激光器

我们展示了一种改进的横向氧化长波(1.55-/spl mu/m) InGaAsP垂直腔DBR QW激光器。该器件具有亚毫安阈值电流，以及最高的连续波(64/spl℃)和脉冲(85/spl℃)工作温度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

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