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Conference Digest. 15th IEEE International Semiconductor Laser Conference最新文献

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0.98 /spl mu/m multiple quantum well tunneling injection lasers extrapolated 0.98 /spl mu/m多量子阱隧穿注入激光器外推
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553737
X. Zhang, Y. Yuan, A. Gutierrez-Aitken, P. Bhattacharya
{"title":"0.98 /spl mu/m multiple quantum well tunneling injection lasers extrapolated","authors":"X. Zhang, Y. Yuan, A. Gutierrez-Aitken, P. Bhattacharya","doi":"10.1109/ISLC.1996.553737","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553737","url":null,"abstract":"We have recently demonstrated that hot-carrier effects can be substantially reduced in single quantum well tunneling injection (SQW-TI) lasers. In this paper, we demonstrate the operation of a multiquantum well TI laser for the first time and a measured maximum intrinsic modulation bandwidth of 84 GHz for the device at a wavelength of 0.98 /spl mu/m. The active region consists of four In/sub 0.2/Ga/sub 0.8/As quantum wells, so designed that each of the four wave functions in the quantum wells is not localized in an individual well but distributed in the multiple quantum wells. Carriers injected into the active region by optical phonon assisted tunneling are uniformly distributed in the MQW, resulting in a high differential gain.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127471717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic microstructures for the next generation of microcavity lasers 下一代微腔激光器的光子微结构
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558850
T. Krauss, Richard M. De La Rue
{"title":"Photonic microstructures for the next generation of microcavity lasers","authors":"T. Krauss, Richard M. De La Rue","doi":"10.1109/ISLC.1996.558850","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558850","url":null,"abstract":"Summary form only given. We present the first experimental demonstration of a two-dimensional photonic bandgap (2D PBG) at optical wavelengths and the localisation of light at a defect in a lD PBG structure. These are major milestones for a novel class of waveguide based GaAs-AlGaAs microcavity semiconductor lasers with very low threshold, reduced noise and a substantial degree of spontaneous emission control.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116797437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum wire and dot lasers and related technologies 量子线点激光器及相关技术
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553721
D. Bimberg
{"title":"Quantum wire and dot lasers and related technologies","authors":"D. Bimberg","doi":"10.1109/ISLC.1996.553721","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553721","url":null,"abstract":"Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"8 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132511175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operation of 2-dimensional arrays os 1.3-/spl mu/m surface-emitting lasers transferred onto a Si motherboard utilizing a AuSn soldering 利用AuSn焊接将1.3-/spl μ m表面发射激光器传输到Si主板上的二维阵列的操作
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553729
A. Plais, J. Lafragette, C. Starck, P. Salet, F. Gerard, T. Fillion, J. Jacquet
{"title":"Operation of 2-dimensional arrays os 1.3-/spl mu/m surface-emitting lasers transferred onto a Si motherboard utilizing a AuSn soldering","authors":"A. Plais, J. Lafragette, C. Starck, P. Salet, F. Gerard, T. Fillion, J. Jacquet","doi":"10.1109/ISLC.1996.553729","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553729","url":null,"abstract":"Summary form only given. The experimental parameters for the soldering of an InP wafer onto a Si substrate have been optimised and used for the fabrication of matrices of 1.3-/spl mu/m VCSELs. The lasers operate at room temperature under pulsed injection; characteristics of such a 3/spl times/3 array will be presented.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117263348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generation of twin photon beams with semiconductor lasers: experiments and semiclassical description 用半导体激光器产生双光子束:实验和半经典描述
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558746
J. Vey, K. Auen, W. Elsasser
{"title":"Generation of twin photon beams with semiconductor lasers: experiments and semiclassical description","authors":"J. Vey, K. Auen, W. Elsasser","doi":"10.1109/ISLC.1996.558746","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558746","url":null,"abstract":"We present results of extensive model calculations of the correlation between the intensity noise emitted by the two facets of a Fabry-Perot laser under different pumping conditions using a semiclassical description. These results are supported by first experimental investigations.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125301670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic L-I characteristics measurement of laser diodes for analyzing intermodulation distortion mechanism 激光二极管动态L-I特性测量分析互调失真机理
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.558797
Hirohito Yamada, T. Okuda, T. Torikai, T. Uji
{"title":"Dynamic L-I characteristics measurement of laser diodes for analyzing intermodulation distortion mechanism","authors":"Hirohito Yamada, T. Okuda, T. Torikai, T. Uji","doi":"10.1109/ISLC.1996.558797","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558797","url":null,"abstract":"A novel dynamic light-output versus current (L-I) characteristics measurement is proposed for analyzing intermodulation distortion in CATV link laser diodes (LDs). A good correlation is found between the dynamic L-I characteristics and the intermodulation distortion characteristics in LDs, enabling us to analyze the distortion mechanism in the LDs.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125515316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modal gain reduction due to barrier state carriers in quantum well lasers 量子阱激光器中势垒态载流子引起的模态增益降低
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553766
D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein
{"title":"Modal gain reduction due to barrier state carriers in quantum well lasers","authors":"D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein","doi":"10.1109/ISLC.1996.553766","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553766","url":null,"abstract":"We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133490990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel self aligned processing technique for mushroom-stripe lasers 一种新的蘑菇条纹激光器自对准加工技术
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553771
Hongliang Zhu, H. Hillmer, H. Burkhard, H.I. Hartnagel
{"title":"A novel self aligned processing technique for mushroom-stripe lasers","authors":"Hongliang Zhu, H. Hillmer, H. Burkhard, H.I. Hartnagel","doi":"10.1109/ISLC.1996.553771","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553771","url":null,"abstract":"A novel self-aligned processing technique for fabricating mushroom-stripe lasers was proposed. This method greatly simplified the process of the mushroom-stripe lasers. Using this newly developed technology, the bent waveguide mushroom-stripe InGaAs MQW DFB multisection tunable lasers have been studied and implemented successfully.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124858213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy 采用气源分子束外延生长高应变1.3 /spl mu/m低阈值电流InAsP-InGaAsP激光器
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553754
P. Thiagarajan, G. Giudice, E. Temkin, G. Y. Robinson
{"title":"Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy","authors":"P. Thiagarajan, G. Giudice, E. Temkin, G. Y. Robinson","doi":"10.1109/ISLC.1996.553754","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553754","url":null,"abstract":"Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128867020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Increase of signal to noise ratio in wavelength conversion using four-wave mixing in semiconductor optical amplifiers 半导体光放大器中四波混频波长转换中信噪比的提高
Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI: 10.1109/ISLC.1996.553734
F. Martelli, A. Mecozzi, A. D'Ottavi, Steve Spano, R. Dall'ara, J. Eckner, G. Guekos
{"title":"Increase of signal to noise ratio in wavelength conversion using four-wave mixing in semiconductor optical amplifiers","authors":"F. Martelli, A. Mecozzi, A. D'Ottavi, Steve Spano, R. Dall'ara, J. Eckner, G. Guekos","doi":"10.1109/ISLC.1996.553734","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553734","url":null,"abstract":"Using semiconductor optical amplifiers of different length, we show experimentally that the signal to noise ratio at the output of a WDM network wavelength converter based on four-wave mixing is larger for amplifiers with large unsaturated gain, and increases with gain saturation.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115780890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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