{"title":"量子线点激光器及相关技术","authors":"D. Bimberg","doi":"10.1109/ISLC.1996.553721","DOIUrl":null,"url":null,"abstract":"Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"8 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum wire and dot lasers and related technologies\",\"authors\":\"D. Bimberg\",\"doi\":\"10.1109/ISLC.1996.553721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"8 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum wire and dot lasers and related technologies
Unique properties like increased gain, differential gain and relaxation oscillation frequency, reduced threshold current density and T/sub 0/ were predicted and recently demonstrated for quantum wire and dot structures fabricated by in-situ growth methods.