利用AuSn焊接将1.3-/spl μ m表面发射激光器传输到Si主板上的二维阵列的操作

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553729

A. Plais, J. Lafragette, C. Starck, P. Salet, F. Gerard, T. Fillion, J. Jacquet

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引用次数: 0

摘要

只提供摘要形式。优化了在硅衬底上焊接InP晶圆的实验参数，并将其用于制作1.3-/spl mu/m的vcsel矩阵。激光器在室温下脉冲注入;本文将介绍这种3/spl倍/3阵列的特性。

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Operation of 2-dimensional arrays os 1.3-/spl mu/m surface-emitting lasers transferred onto a Si motherboard utilizing a AuSn soldering

Summary form only given. The experimental parameters for the soldering of an InP wafer onto a Si substrate have been optimised and used for the fabrication of matrices of 1.3-/spl mu/m VCSELs. The lasers operate at room temperature under pulsed injection; characteristics of such a 3/spl times/3 array will be presented.

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Conference Digest. 15th IEEE International Semiconductor Laser Conference

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