量子阱激光器中势垒态载流子引起的模态增益降低

Conference Digest. 15th IEEE International Semiconductor Laser Conference Pub Date : 1996-10-13 DOI:10.1109/ISLC.1996.553766

D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein

{"title":"量子阱激光器中势垒态载流子引起的模态增益降低","authors":"D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein","doi":"10.1109/ISLC.1996.553766","DOIUrl":null,"url":null,"abstract":"We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modal gain reduction due to barrier state carriers in quantum well lasers\",\"authors\":\"D. Finzi, V. Mikhaelashvili, N. Tessler, G. Eisenstein\",\"doi\":\"10.1109/ISLC.1996.553766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.\",\"PeriodicalId\":346992,\"journal\":{\"name\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 15th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.1996.553766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们描述了工作在980 nm附近的InGaAs-GaAs量子阱激光器中与势垒态电子相关的效应所导致的模态增益的变化。由于吸收和光约束的变化，电和光激励可以导致模态增益损失平衡的极端变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modal gain reduction due to barrier state carriers in quantum well lasers

We describe changes in modal gain resulting from effects related to barrier state electrons in InGaAs-GaAs quantum well lasers operating near 980 nm. Electrical and optical excitations can lead to extreme changes in the modal gain-loss balance due to changes in absorption and optical confinement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest. 15th IEEE International Semiconductor Laser Conference

自引率

0.00%

发文量